Show simple item record

PL study of oxygen related defects in silicon

dc.contributor.authorLibezny, Milan
dc.contributor.authorKaniava, Arvydas
dc.contributor.authorKissinger, G.
dc.contributor.authorNijs, Johan
dc.contributor.authorClaeys, Cor
dc.contributor.authorVanhellemont, Jan
dc.date.accessioned2021-09-29T13:09:17Z
dc.date.available2021-09-29T13:09:17Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/724
dc.sourceIIOimport
dc.titlePL study of oxygen related defects in silicon
dc.typeProceedings paper
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage166
dc.source.endpage172
dc.source.conferenceALTECH 95: Analytical Techniques for Semiconductor Materials and Process Characterization II. Proceedings of the Satellite Sympo
dc.source.conferencedate28/09/1995
dc.source.conferencelocationDen Haag The Netherlands
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 95-30


Files in this item

Thumbnail
Name:
698.pdf
Size:
379.6Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record