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A new 2 isolated-bits/cell Flash memory device with self aligned split gate structure using ONO stacks for charge storage
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Authors
Breuil, Laurent
;
Schuler, Franz
;
Haspeslagh, Luc
;
Wellekens, Dirk
;
De Vos, Joeri
;
Lorenzini, Martino
;
Van Houdt, Jan
Conference
19th IEEE Nonvolatile Semiconductor Memory Workshop - NVSMW
Title
A new 2 isolated-bits/cell Flash memory device with self aligned split gate structure using ONO stacks for charge storage
Publication type
Proceedings paper
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