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RTA-preparation of b-FeSi2 layers from MBE-grown FeSi films deposited on SiGe(100) substrates

dc.contributor.authorLibezny, Milan
dc.contributor.authorPoortmans, Jef
dc.contributor.authorDekoster, J.
dc.contributor.authorDegroote, S.
dc.contributor.authorVantomme, Andre
dc.contributor.authorde Lange, B. G. M.
dc.contributor.authorLangouche, G.
dc.contributor.authorNijs, Johan
dc.date.accessioned2021-09-29T13:09:23Z
dc.date.available2021-09-29T13:09:23Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/726
dc.sourceIIOimport
dc.titleRTA-preparation of b-FeSi2 layers from MBE-grown FeSi films deposited on SiGe(100) substrates
dc.typeProceedings paper
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorVantomme, Andre
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage407
dc.source.endpage412
dc.source.conferenceRapid Thermal and Integrated Processing IV
dc.source.conferencedate17/04/1995
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 387


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