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High-k materials for advanced gate stack dielectrics: a comparison of ALCVD and MOCVD as deposition technologies

dc.contributor.authorCaymax, Matty
dc.contributor.authorBender, Hugo
dc.contributor.authorBrijs, Bert
dc.contributor.authorConard, Thierry
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorDelabie, Annelies
dc.contributor.authorHeyns, Marc
dc.contributor.authorOnsia, Bart
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorRichard, Olivier
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorZhao, Chao
dc.contributor.authorMaes, J.W.
dc.contributor.authorDaté, L.
dc.contributor.authorPique, D.
dc.contributor.authorYoung, E.
dc.contributor.authorTsai, W.
dc.contributor.authorShimamoto, Y.
dc.date.accessioned2021-10-15T04:07:18Z
dc.date.available2021-10-15T04:07:18Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7298
dc.sourceIIOimport
dc.titleHigh-k materials for advanced gate stack dielectrics: a comparison of ALCVD and MOCVD as deposition technologies
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorOnsia, Bart
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewno
dc.source.beginpage47
dc.source.endpage58
dc.source.conferenceCMOS Front-End Materials and Process Technology
dc.source.conferencedate21/04/2003
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMaterials Research Symposium Proceedings; Vol. 765


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