Show simple item record

Threshold voltage instability in CMOS high-K dielectrics: comparison between hafnium and aluminum oxide

dc.contributor.authorCimino, S.
dc.contributor.authorPantisano, Luigi
dc.contributor.authorPacagnella, A.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-15T04:09:24Z
dc.date.available2021-10-15T04:09:24Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7322
dc.sourceIIOimport
dc.titleThreshold voltage instability in CMOS high-K dielectrics: comparison between hafnium and aluminum oxide
dc.typeOral presentation
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.conference34th IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate4/12/2003
dc.source.conferencelocationWashington DC USA
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record