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(TOF-)SIMS profiling of HfO2/Si stacks: Is there a way to minimize the artefacts

dc.contributor.authorConard, Thierry
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-15T04:11:16Z
dc.date.available2021-10-15T04:11:16Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7341
dc.sourceIIOimport
dc.title(TOF-)SIMS profiling of HfO2/Si stacks: Is there a way to minimize the artefacts
dc.typeMeeting abstract
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.source.peerreviewyes
dc.source.beginpage124
dc.source.conferenceInternational Conference on Secondary Ion Mass Spectrometry - SIMS XIV
dc.source.conferencedate14/09/2003
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - imec


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