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Scaling of Hf-based gate dielectrics - integration with polysilicon gates

dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorCaymax, Matty
dc.contributor.authorChen, Jerry
dc.contributor.authorClaes, Martine
dc.contributor.authorConard, Thierry
dc.contributor.authorDelabie, Annelies
dc.contributor.authorDeweerd, Wim
dc.contributor.authorKaushik, Vidya
dc.contributor.authorKerber, Andreas
dc.contributor.authorKubicek, Stefan
dc.contributor.authorNiwa, Masaaki
dc.contributor.authorPantisano, Luigi
dc.contributor.authorPuurunen, Riikka
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSchram, Tom
dc.contributor.authorShimamoto, Yasuhiro
dc.contributor.authorTsai, Wilman
dc.contributor.authorRöhr, Erika
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorWitters, Thomas
dc.contributor.authorYoung, Edward
dc.contributor.authorZhao, Chao
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T04:18:17Z
dc.date.available2021-10-15T04:18:17Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7404
dc.sourceIIOimport
dc.titleScaling of Hf-based gate dielectrics - integration with polysilicon gates
dc.typeMeeting abstract
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewno
dc.source.conference204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials
dc.source.conferencedate13/10/2003
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - imec
imec.internalnotesAbstract 560


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