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Characterization of charge trapping in SiO2/HfO2 dielectrics

dc.contributor.authorDegraeve, Robin
dc.contributor.authorKerber, Andreas
dc.contributor.authorCartier, Ed
dc.contributor.authorPantisano, Luigi
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-15T04:27:31Z
dc.date.available2021-10-15T04:27:31Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7479
dc.sourceIIOimport
dc.titleCharacterization of charge trapping in SiO2/HfO2 dielectrics
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage322
dc.source.endpage323
dc.source.conferenceProceedings International Semiconductor Device Research Symposium
dc.source.conferencedate10/12/2003
dc.source.conferencelocationWashington DC USA
imec.availabilityPublished - imec


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