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dc.contributor.authorDegraeve, Robin
dc.contributor.authorKerber, Andreas
dc.contributor.authorRoussel, Philippe
dc.contributor.authorCartier, Ed
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorPantisano, Luigi
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-15T04:27:40Z
dc.date.available2021-10-15T04:27:40Z
dc.date.issued2003-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7480
dc.sourceIIOimport
dc.titleEffect of bulk trap density on HfO2 reliability and yield
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.source.peerreviewno
dc.source.beginpage935
dc.source.endpage938
dc.source.conferenceTechnical Digest IEDM - IEEE International Electron Devices Meeting
dc.source.conferencedate8/12/2003
dc.source.conferencelocationWashington DC USA
imec.availabilityPublished - imec


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