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Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer

dc.contributor.authorDelhougne, Romain
dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-15T04:29:08Z
dc.date.available2021-10-15T04:29:08Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7490
dc.sourceIIOimport
dc.titleDevelopment of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer
dc.typeMeeting abstract
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage115
dc.source.endpage116
dc.source.conferenceBook of Abstracts ISTDM - 1st International SiGe Technology and Device Meeting
dc.source.conferencedate15/01/2003
dc.source.conferencelocationNagoya Japan
imec.availabilityPublished - imec


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