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Analysis and optimisation of the 2D-dopant profile in a 90 nm CMOS technology using scanning spreading resistance microscopy

dc.contributor.authorEyben, Pierre
dc.contributor.authorAlvarez, David
dc.contributor.authorJurczak, Gosia
dc.contributor.authorRooyackers, Rita
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-15T04:39:08Z
dc.date.available2021-10-15T04:39:08Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7559
dc.sourceIIOimport
dc.titleAnalysis and optimisation of the 2D-dopant profile in a 90 nm CMOS technology using scanning spreading resistance microscopy
dc.typeMeeting abstract
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.source.peerreviewno
dc.source.beginpage183
dc.source.conferenceUltra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic.
dc.source.conferencedate27/04/2003
dc.source.conferencelocationSanta Cruz, CA USA
imec.availabilityPublished - imec


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