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Gate oxide atomic layer deposition studied by in situ infrared spectroscopy

dc.contributor.authorFrank, M.M.
dc.contributor.authorDörmann, S.
dc.contributor.authorChabal, Y.J.
dc.contributor.authorSayan, S.
dc.contributor.authorGarfunkel, E.
dc.contributor.authorWilk, G.D.
dc.contributor.authorGreen, M.L.
dc.contributor.authorDelabie, Annelies
dc.contributor.authorBrijs, Bert
dc.date.accessioned2021-10-15T04:42:13Z
dc.date.available2021-10-15T04:42:13Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7579
dc.sourceIIOimport
dc.titleGate oxide atomic layer deposition studied by in situ infrared spectroscopy
dc.typeOral presentation
dc.contributor.imecauthorDelabie, Annelies
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium I Functional Metal Oxides - Semiconductor Structures
dc.source.conferencedate10/06/2003
dc.source.conferencelocationStrasbourg France
imec.availabilityPublished - imec


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