Characterization of ultra-thin SOI transistors down to 20nm gate length regime with scanning spreading resistance microscopy (SSRM)
dc.contributor.author | Hartwich, J. | |
dc.contributor.author | Alvarez, David | |
dc.contributor.author | Dreeskornfeld, L. | |
dc.contributor.author | Specht, M. | |
dc.contributor.author | Vandervorst, Wilfried | |
dc.contributor.author | Risch, Lothar | |
dc.date.accessioned | 2021-10-15T04:53:01Z | |
dc.date.available | 2021-10-15T04:53:01Z | |
dc.date.issued | 2003 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/7643 | |
dc.source | IIOimport | |
dc.title | Characterization of ultra-thin SOI transistors down to 20nm gate length regime with scanning spreading resistance microscopy (SSRM) | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Vandervorst, Wilfried | |
dc.source.peerreview | no | |
dc.source.conference | Proceedings 33rd European Solid-State Device Research Conference - ESSDERC | |
dc.source.conferencedate | 16/09/2003 | |
dc.source.conferencelocation | Estoril Portugal | |
imec.availability | Published - imec | |
imec.internalnotes | CD-ROM proceedings |
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