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The influence of defects on campatibility and yield of the HfO2-polysilicon gate stack for CMOS integration

dc.contributor.authorKaushik, Vidya
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorCarter, Richard
dc.contributor.authorClaes, Martine
dc.contributor.authorRöhr, Erika
dc.contributor.authorPantisano, Luigi
dc.contributor.authorKluth, Jon
dc.contributor.authorKerber, Andreas
dc.contributor.authorCosnier, Vincent
dc.contributor.authorCartier, Eduard
dc.contributor.authorTsai, Wilman
dc.contributor.authorYoung, Edward
dc.contributor.authorGreen, Martin
dc.contributor.authorChen, Jerry
dc.contributor.authorJang, S.A.
dc.contributor.authorLin, S.
dc.contributor.authorDelabie, Annelies
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorManabe, Yukiko
dc.contributor.authorRichard, Olivier
dc.contributor.authorZhao, Chao
dc.contributor.authorBender, Hugo
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T05:07:32Z
dc.date.available2021-10-15T05:07:32Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7722
dc.sourceIIOimport
dc.titleThe influence of defects on campatibility and yield of the HfO2-polysilicon gate stack for CMOS integration
dc.typeProceedings paper
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage335
dc.source.endpage340
dc.source.conferenceNovel Materials and Processes for Advanced CMOS
dc.source.conferencedate2/12/2002
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 745


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