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Ni-based silicides: material issues for advanced CMOS applications

dc.contributor.authorKittl, Jorge
dc.contributor.authorLauwers, Anne
dc.contributor.authorChamirian, Oxana
dc.contributor.authorVan Dal, Mark
dc.contributor.authorAkheyar, Amal
dc.contributor.authorRichard, Olivier
dc.contributor.authorLisoni, Judit
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorLindsay, Richard
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-15T05:11:34Z
dc.date.available2021-10-15T05:11:34Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7742
dc.sourceIIOimport
dc.titleNi-based silicides: material issues for advanced CMOS applications
dc.typeProceedings paper
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.beginpage177
dc.source.endpage182
dc.source.conferenceAdvanced Short-Time Thermal Processing for Si-based CMOS devices
dc.source.conferencedate27/04/2003
dc.source.conferencelocationParis France
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; PV 2003-14


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