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Method for determining the effectiveness of silicon nitride as a barrier layer for HfO2

dc.contributor.authorKraus, Harald
dc.contributor.authorSnow, Jim
dc.contributor.authorVan Doorne, Patrick
dc.contributor.authorMertens, Paul
dc.contributor.authorKovacs, Frederic
dc.date.accessioned2021-10-15T05:13:47Z
dc.date.available2021-10-15T05:13:47Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7754
dc.sourceIIOimport
dc.titleMethod for determining the effectiveness of silicon nitride as a barrier layer for HfO2
dc.typeMeeting abstract
dc.contributor.imecauthorMertens, Paul
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials
dc.source.conferencedate13/10/2003
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - open access
imec.internalnotesAbstract 536


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