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TaN metal gate MOSFETs with agressively scaled HfO2 dielectrics
Publication:
TaN metal gate MOSFETs with agressively scaled HfO2 dielectrics
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Date
2003
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lander, Rob
;
Schram, Tom
;
Lujan, Guilherme
;
Hooker, Jacob
;
Vertommen, Johan
;
Lee, S.
;
Deweerd, Wim
;
Boullart, Werner
;
Van Elshocht, Sven
;
Carter, Richard
;
Kubicek, Stefan
;
De Meyer, Kristin
;
De Gendt, Stefan
;
Heyns, Marc
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1934
since deposited on 2021-10-15
Acq. date: 2025-12-10
Citations
Metrics
Views
1934
since deposited on 2021-10-15
Acq. date: 2025-12-10
Citations