Show simple item record

Avoiding loading effects and facet growth: key parameters for a successful implementation of selective epitaxial SiGe deposition for HBT-BiCMOS and high-mobility hetero-channel pMOS devices

dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-15T05:26:31Z
dc.date.available2021-10-15T05:26:31Z
dc.date.issued2003-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7817
dc.sourceIIOimport
dc.titleAvoiding loading effects and facet growth: key parameters for a successful implementation of selective epitaxial SiGe deposition for HBT-BiCMOS and high-mobility hetero-channel pMOS devices
dc.typeMeeting abstract
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage109
dc.source.endpage110
dc.source.conferenceBook of Abstracts 1st International SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate15/01/2003
dc.source.conferencelocationNagoya Japan
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record