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A new technique to fabricate Ultra-Shallow-Junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth

dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorPeytier, Ivan
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorKubicek, Stefan
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLindsay, Richard
dc.contributor.authorRichard, Olivier
dc.date.accessioned2021-10-15T05:26:45Z
dc.date.available2021-10-15T05:26:45Z
dc.date.issued2003-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7818
dc.sourceIIOimport
dc.titleA new technique to fabricate Ultra-Shallow-Junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth
dc.typeMeeting abstract
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorRichard, Olivier
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.beginpage159
dc.source.endpage160
dc.source.conferenceBook of Abstracts 1st International SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate15/01/2003
dc.source.conferencelocationNagoya Japan
imec.availabilityPublished - imec


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