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Strained Si and strained SiGe fabrication schemes using (selective) epitaxial growth in a RPCVD system

dc.contributor.authorLoo, Roger
dc.contributor.authorDelhougne, Romain
dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-15T05:27:36Z
dc.date.available2021-10-15T05:27:36Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7822
dc.sourceIIOimport
dc.titleStrained Si and strained SiGe fabrication schemes using (selective) epitaxial growth in a RPCVD system
dc.typeOral presentation
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceWorkshop on Si/Sige Field-Effect Transistors
dc.source.conferencedate10/10/2003
dc.source.conferencelocationUlm Germany
imec.availabilityPublished - imec


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