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Lorentzian noise in ultra-thin gate oxide SOI MOSFETs observed under conditions of a linear kink effects

dc.contributor.authorLukyanchikova, N.
dc.contributor.authorGarbar, N.
dc.contributor.authorPetrichuk, M.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T05:30:12Z
dc.date.available2021-10-15T05:30:12Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7834
dc.sourceIIOimport
dc.titleLorentzian noise in ultra-thin gate oxide SOI MOSFETs observed under conditions of a linear kink effects
dc.typeProceedings paper
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage327
dc.source.endpage332
dc.source.conferenceProceedings of the 17th International Conference on Noise and Fluctuations - ICNF
dc.source.conferencedate18/08/2003
dc.source.conferencelocationPrague Czech Republic
imec.availabilityPublished - open access


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