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Strain relaxation of SiGe buffers on Si and SOI wafers induced by He+ ion implantation and thermal annealing

dc.contributor.authorMantl, S.
dc.contributor.authorHolländer, B.
dc.contributor.authorHüging, N.
dc.contributor.authorLuysberg, M.
dc.contributor.authorLenk, St.
dc.contributor.authorHogg, S.M.
dc.contributor.authorHerzog, H.-J.
dc.contributor.authorHackbarth, T.
dc.contributor.authorLoo, Roger
dc.contributor.authorBauer, M.
dc.date.accessioned2021-10-15T05:35:41Z
dc.date.available2021-10-15T05:35:41Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7860
dc.sourceIIOimport
dc.titleStrain relaxation of SiGe buffers on Si and SOI wafers induced by He+ ion implantation and thermal annealing
dc.typeOral presentation
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conference12th EURO-CVD Workshop
dc.source.conferencedate16/02/2003
dc.source.conferencelocationBad Hofgastein Austria
imec.availabilityPublished - imec


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