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N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C

dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorCaymax, Matty
dc.contributor.authorVan Nieuwenhuysen, Kris
dc.contributor.authorDoumen, Geert
dc.contributor.authorBrijs, Bert
dc.contributor.authorHopstaken, M.
dc.contributor.authorGeenen, Luc
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-15T05:44:40Z
dc.date.available2021-10-15T05:44:40Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7902
dc.sourceIIOimport
dc.titleN2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C
dc.typeMeeting abstract
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDoumen, Geert
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.beginpage121
dc.source.endpage122
dc.source.conferenceAbstracts Book ISTDM - 1st International SiGe Technology and Device Meeting
dc.source.conferencedate15/01/2003
dc.source.conferencelocationNagoya Japan
imec.availabilityPublished - imec


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