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RF performance vulnerability to hot carrier stress and consequent breakdown in low power 90nm RFCMOS

dc.contributor.authorPantisano, Luigi
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorKaczer, Ben
dc.contributor.authorJeamsaksiri, Wutthinan
dc.contributor.authorVenegas, Rafael
dc.contributor.authorDegraeve, Robin
dc.contributor.authorCheung, K.P.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-15T05:59:53Z
dc.date.available2021-10-15T05:59:53Z
dc.date.issued2003-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7971
dc.sourceIIOimport
dc.titleRF performance vulnerability to hot carrier stress and consequent breakdown in low power 90nm RFCMOS
dc.typeProceedings paper
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewyes
dc.source.beginpage181
dc.source.endpage184
dc.source.conferenceTechnical Digest IEDM - International Electron Devices Meeting
dc.source.conferencedate9/12/2003
dc.source.conferencelocationWashington DC USA
imec.availabilityPublished - imec


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