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The role of fluorine with Ge pre-amorphisation in forming PMOS junctions for the 65-nm CMOS technology node

dc.contributor.authorPawlak, Bartek
dc.contributor.authorLindsay, Richard
dc.contributor.authorSurdeanu, Radu
dc.contributor.authorPagès, Xavier
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorVan der Jeugd, Kees
dc.date.accessioned2021-10-15T06:03:59Z
dc.date.available2021-10-15T06:03:59Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7989
dc.sourceIIOimport
dc.titleThe role of fluorine with Ge pre-amorphisation in forming PMOS junctions for the 65-nm CMOS technology node
dc.typeProceedings paper
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorVan der Jeugd, Kees
dc.source.peerreviewno
dc.source.beginpage99
dc.source.endpage104
dc.source.conferenceAdvanced Short-Time Thermal Processing for Si-based CMOS Devices
dc.source.conferencelocation
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; PV 2003-14


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