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The impact of sub monolayers of HfO2 on the device performance of high-k transistors

dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorPantisano, Luigi
dc.contributor.authorKaushik, Vidya
dc.contributor.authorSaito, S.I.
dc.contributor.authorShimamoto, Yasuhiro
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T06:19:30Z
dc.date.available2021-10-15T06:19:30Z
dc.date.issued2003-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8057
dc.sourceIIOimport
dc.titleThe impact of sub monolayers of HfO2 on the device performance of high-k transistors
dc.typeProceedings paper
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage87
dc.source.endpage88
dc.source.conferenceTechnical Digest IEDM - International Electron Devices Meeting
dc.source.conferencedate7/12/2003
dc.source.conferencelocationWashington DC USA
imec.availabilityPublished - imec


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