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Mobility in high-k dielectric based field effect transistors

dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorTsai, Wilman
dc.contributor.authorKerber, Andreas
dc.contributor.authorChen, P.J.
dc.contributor.authorCartier, E.
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T06:19:45Z
dc.date.available2021-10-15T06:19:45Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8058
dc.sourceIIOimport
dc.titleMobility in high-k dielectric based field effect transistors
dc.typeProceedings paper
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage46
dc.source.endpage47
dc.source.conferenceExtended Abstracts of the 2003 International Conference on Solid State Device and Materials
dc.source.conferencedate16/09/2003
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - imec


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