A deep level study of high-temperature electron-irradiated n-type Cz silicon
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Claeys, Cor | |
dc.contributor.author | Neimash, V. | |
dc.contributor.author | Kraitchinskii, A. | |
dc.contributor.author | Kras'ko, M. | |
dc.contributor.author | Tishenko, V. | |
dc.contributor.author | Voitovich, V. | |
dc.date.accessioned | 2021-10-15T06:40:05Z | |
dc.date.available | 2021-10-15T06:40:05Z | |
dc.date.issued | 2003 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/8143 | |
dc.source | IIOimport | |
dc.title | A deep level study of high-temperature electron-irradiated n-type Cz silicon | |
dc.type | Oral presentation | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.source.peerreview | no | |
dc.source.conference | Gettering and Defect Engineering in Semiconductor Technology - GADEST | |
dc.source.conferencedate | 20/09/2003 | |
dc.source.conferencelocation | Berlin Germany | |
imec.availability | Published - imec |
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