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Impact of the back-gate bias on the low-frequency noise of fully depleted silicon-on-insulator MOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorClaeys, Cor
dc.contributor.authorLukyanchikova, N.
dc.contributor.authorGarbar, N.
dc.date.accessioned2021-10-15T06:41:02Z
dc.date.available2021-10-15T06:41:02Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8147
dc.sourceIIOimport
dc.titleImpact of the back-gate bias on the low-frequency noise of fully depleted silicon-on-insulator MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage321
dc.source.endpage326
dc.source.conferenceProceedings of the 17th International Conference on Noise and Fluctuations - ICNF
dc.source.conferencedate18/08/2003
dc.source.conferencelocationPrague Czech Republic
imec.availabilityPublished - open access


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