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Minority carrier lifetime improvement in p-type silicon by oxygen related centers gettering at low temperatures: application to the heterojunction solar cell processing

dc.contributor.authorUlyashin, A.
dc.contributor.authorBilyalov, Renat
dc.contributor.authorBruck, A.
dc.contributor.authorScherff, M.
dc.contributor.authorJob, R.
dc.contributor.authorFahrner, W.
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-15T07:04:28Z
dc.date.available2021-10-15T07:04:28Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8237
dc.sourceIIOimport
dc.titleMinority carrier lifetime improvement in p-type silicon by oxygen related centers gettering at low temperatures: application to the heterojunction solar cell processing
dc.typeOral presentation
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.conference10th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology - GADEST
dc.source.conferencedate21/09/2003
dc.source.conferencelocationZeuthen Germany
imec.availabilityPublished - imec


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