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Sub nanometer depth resolution profiling of the evolution and annealing of damage and the dopant redistribution of ultra-shallow As and Sb implants in Si

dc.contributor.authorvan den Berg, J.A.
dc.contributor.authorWerner, M.
dc.contributor.authorArmour, D.G.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClarysse, Trudo
dc.contributor.authorCollart, E.H.J.
dc.contributor.authorGoldberg, R.D.
dc.contributor.authorBailey, P.
dc.contributor.authorNoakes, T.C.
dc.date.accessioned2021-10-15T07:09:03Z
dc.date.available2021-10-15T07:09:03Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8255
dc.sourceIIOimport
dc.titleSub nanometer depth resolution profiling of the evolution and annealing of damage and the dopant redistribution of ultra-shallow As and Sb implants in Si
dc.typeMeeting abstract
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.beginpage446
dc.source.conferenceUltra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic.
dc.source.conferencedate27/04/2003
dc.source.conferencelocationSanta Cruz, CA USA
imec.availabilityPublished - imec


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