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Physical characterization of HfO2 deposited on Ge substrates by MOCVD

dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorBrijs, Bert
dc.contributor.authorCaymax, Matty
dc.contributor.authorConard, Thierry
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorKubicek, Stefan
dc.contributor.authorMeuris, Marc
dc.contributor.authorOnsia, Bart
dc.contributor.authorRichard, Olivier
dc.contributor.authorTeerlinck, Ivo
dc.contributor.authorVan Steenbergen, Jan
dc.contributor.authorZhao, Chao
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T07:12:56Z
dc.date.available2021-10-15T07:12:56Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8270
dc.sourceIIOimport
dc.titlePhysical characterization of HfO2 deposited on Ge substrates by MOCVD
dc.typeProceedings paper
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorOnsia, Bart
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVan Steenbergen, Jan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.beginpage31
dc.source.endpage32
dc.source.conferenceProceedings International Semiconductor Device Research Symposium
dc.source.conferencedate10/12/2003
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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