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Ultra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applications

dc.contributor.authorVeloso, Anabela
dc.contributor.authorCubaynes, Florence
dc.contributor.authorRothschild, Aude
dc.contributor.authorMertens, Sofie
dc.contributor.authorDegraeve, Robin
dc.contributor.authorO'Connor, Robert
dc.contributor.authorOlsen, Chris
dc.contributor.authorDate, Lucien
dc.contributor.authorSchaekers, Marc
dc.contributor.authorDachs, Charles
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-15T07:35:42Z
dc.date.available2021-10-15T07:35:42Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8354
dc.sourceIIOimport
dc.titleUltra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applications
dc.typeProceedings paper
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDate, Lucien
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.source.peerreviewyes
dc.source.conference33rd European Solid-State Devices Research Conference - ESSDERC
dc.source.conferencedate16/09/2003
dc.source.conferencelocationLisbon Portugal
imec.availabilityPublished - imec


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