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dc.contributor.authorYoung, C.D.
dc.contributor.authorKerber, Andreas
dc.contributor.authorHou, T.H.
dc.contributor.authorCartier, E.
dc.contributor.authorBrown, G.A.
dc.contributor.authorBersuker, G.
dc.contributor.authorKim, Y.
dc.contributor.authorLim, C.
dc.contributor.authorGutt, J.
dc.contributor.authorLysaght, P.
dc.contributor.authorBennett, J.
dc.contributor.authorLee, C.H.
dc.contributor.authorGopalan, S.
dc.contributor.authorGardner, M.
dc.contributor.authorZeitzoff, P.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMurto, R.W.
dc.contributor.authorHuff, H.R.
dc.date.accessioned2021-10-15T07:56:32Z
dc.date.available2021-10-15T07:56:32Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8430
dc.sourceIIOimport
dc.titleCharge trapping and mobility degradation in MOCVD hafnium silicate gate dielectric stack structures
dc.typeMeeting abstract
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.conference204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials
dc.source.conferencedate12/10/2003
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - imec
imec.internalnotesAbstract 577


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