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Implementation of high-K and metal gate materials for the 45nm node and beyond: gate patterning development
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Implementation of high-K and metal gate materials for the 45nm node and beyond: gate patterning development
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Date
2004
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Beckx, Stephan
;
Demand, Marc
;
Locorotondo, Sabrina
;
Henson, K.
;
Claes, Martine
;
Paraschiv, Vasile
;
Shamiryan, Denis
;
Jaenen, Patrick
;
Boullart, Werner
;
De Gendt, Stefan
;
Biesemans, Serge
;
Vanhaelemeersch, Serge
;
Vertommen, Johan
;
Coenegrachts, Bart
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2025
since deposited on 2021-10-15
3
last month
Acq. date: 2026-01-11
Citations