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The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates

dc.contributor.authorBuca, D.
dc.contributor.authorMörschbächer, M.J.
dc.contributor.authorHolländer, B.
dc.contributor.authorLuysberg, M.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorMantl, S.
dc.date.accessioned2021-10-15T12:48:42Z
dc.date.available2021-10-15T12:48:42Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8647
dc.sourceIIOimport
dc.titleThe use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage15
dc.source.endpage26
dc.source.conferenceHigh-Mobility Group-IV Materials and Devices
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Fransisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMaterials Research Society Symposium Proceedings; Vol. 809


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