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Current understanding and modeling of B diffusion and activation anomalies in preamporphized ultra-shallow junctions

dc.contributor.authorColombeau, B.
dc.contributor.authorSmith, A.J.
dc.contributor.authorCowern, N.E.B.
dc.contributor.authorCristiano, F.
dc.contributor.authorClaverie, A.
dc.contributor.authorDuffy, Ray
dc.contributor.authorPawlak, Bartek
dc.contributor.authorOrtiz, C.J.
dc.contributor.authorPichler, P.
dc.contributor.authorLampin, E.
dc.contributor.authorZechner, C.
dc.date.accessioned2021-10-15T12:55:39Z
dc.date.available2021-10-15T12:55:39Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8712
dc.sourceIIOimport
dc.titleCurrent understanding and modeling of B diffusion and activation anomalies in preamporphized ultra-shallow junctions
dc.typeProceedings paper
dc.contributor.imecauthorPawlak, Bartek
dc.source.peerreviewno
dc.source.beginpageC3.6
dc.source.conferenceSilicon Front-End Junction Formation - Physics and Technology
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMaterials Research Symposium Proceedings; Vol. 810


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