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Experimental analysis of a Ge-HfO2-TaN gate stack with a large amount of interface states

dc.contributor.authorCroon, Jeroen
dc.contributor.authorKaczer, Ben
dc.contributor.authorLujan, Guilherme
dc.contributor.authorKubicek, Stefan
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-15T12:58:46Z
dc.date.available2021-10-15T12:58:46Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8738
dc.sourceIIOimport
dc.titleExperimental analysis of a Ge-HfO2-TaN gate stack with a large amount of interface states
dc.typeOral presentation
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.conferenceSemiconductor Interface Specialists Conference - SISC
dc.source.conferencedate9/12/2004
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - imec


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