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Correlation between stress-induced leakage current (SILC) and the HfO2 bulk trap density in a SiO2/HfO2 stack

dc.contributor.authorCrupi, Felice
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKerber, Andreas
dc.contributor.authorKwak, Dong Hwa
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-15T12:58:53Z
dc.date.available2021-10-15T12:58:53Z
dc.date.issued2004-04
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8739
dc.sourceIIOimport
dc.titleCorrelation between stress-induced leakage current (SILC) and the HfO2 bulk trap density in a SiO2/HfO2 stack
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewyes
dc.source.beginpage181
dc.source.endpage187
dc.source.conferenceProceedings IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate25/04/2004
dc.source.conferencelocationPhoenix, AZ USA
imec.availabilityPublished - imec


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