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dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorBeckx, Stephan
dc.contributor.authorCaymax, Matty
dc.contributor.authorClaes, Martine
dc.contributor.authorConard, Thierry
dc.contributor.authorDelabie, Annelies
dc.contributor.authorDeweerd, Wim
dc.contributor.authorHellin, David
dc.contributor.authorKraus, Harald
dc.contributor.authorOnsia, Bart
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorPuurunen, Riikka
dc.contributor.authorRohr, Erika
dc.contributor.authorSnow, Jim
dc.contributor.authorTsai, Wilman
dc.contributor.authorVan Doorne, Patrick
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorVertommen, Johan
dc.contributor.authorWitters, Thomas
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T13:01:39Z
dc.date.available2021-10-15T13:01:39Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8759
dc.sourceIIOimport
dc.titleIntegration of high-K gate dielectrics - wet etch, cleaning and surface conditioning
dc.typeProceedings paper
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorHellin, David
dc.contributor.imecauthorOnsia, Bart
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage67
dc.source.endpage77
dc.source.conferenceCleaning Technology in Semiconducting Device Manufacturing VIII. Proceedings of the International Symposium
dc.source.conferencedate13/10/2003
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 2003-26


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