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Scaling of HF-based gate dielectrics - intgeration with polysilicon gates

dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorCaymax, Matty
dc.contributor.authorChen, J.
dc.contributor.authorClaes, Martine
dc.contributor.authorConard, Thierry
dc.contributor.authorDelabie, Annelies
dc.contributor.authorDeweerd, Wim
dc.contributor.authorKaushik, Vidya
dc.contributor.authorKerber, Andreas
dc.contributor.authorKubicek, Stefan
dc.contributor.authorNiwa, M.
dc.contributor.authorPantisano, Luigi
dc.contributor.authorPuurunen, Riikka
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSchram, Tom
dc.contributor.authorShimamoto, Yasuhiro
dc.contributor.authorTsai, Wilman
dc.contributor.authorRohr, Erika
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorWitters, Thomas
dc.contributor.authorYoung, Edward
dc.contributor.authorZhao, Chao
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T13:01:54Z
dc.date.available2021-10-15T13:01:54Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8760
dc.sourceIIOimport
dc.titleScaling of HF-based gate dielectrics - intgeration with polysilicon gates
dc.typeProceedings paper
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewno
dc.source.beginpage267
dc.source.endpage275
dc.source.conferencePhysics and Technology of High-k Gate Dielectrics II
dc.source.conferencedate12/10/2003
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2003-22


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