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HfO2 high-k gate dielectrics on germanium by molecular beam deposition

dc.contributor.authorDimoulas, G.
dc.contributor.authorMavrou, G.
dc.contributor.authorVellianitis, G.
dc.contributor.authorEvangelou, E.
dc.contributor.authorBoukos, N.
dc.contributor.authorTravlos, A.
dc.contributor.authorHoussa, Michel
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-15T13:15:14Z
dc.date.available2021-10-15T13:15:14Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8849
dc.sourceIIOimport
dc.titleHfO2 high-k gate dielectrics on germanium by molecular beam deposition
dc.typeOral presentation
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewno
dc.source.conferenceSemiconductor Interface Specialists Conference
dc.source.conferencedate9/12/2004
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - imec


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