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Analysis of junctions formed in strained Si/SiGe substrates

dc.contributor.authorEneman, Geert
dc.contributor.authorSimoen, Eddy
dc.contributor.authorLauwers, Anne
dc.contributor.authorLindsay, Richard
dc.contributor.authorVerheyen, Peter
dc.contributor.authorDelhougne, Romain
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorDemuynck, Steven
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-15T13:20:37Z
dc.date.available2021-10-15T13:20:37Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8881
dc.sourceIIOimport
dc.titleAnalysis of junctions formed in strained Si/SiGe substrates
dc.typeProceedings paper
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage187
dc.source.endpage192
dc.source.conferenceHigh-Mobility Group-IV Materials and Devices
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Francisco USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 809


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