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High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation

dc.contributor.authorGermain, Marianne
dc.contributor.authorDerluyn, Joff
dc.contributor.authorXiao, Dongping
dc.contributor.authorVandersmissen, Raf
dc.contributor.authorDas, Johan
dc.contributor.authorWang, Wenfei
dc.contributor.authorBoeykens, Steven
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorRuythooren, Wouter
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-15T13:33:09Z
dc.date.available2021-10-15T13:33:09Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8950
dc.sourceIIOimport
dc.titleHigh performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation
dc.typeOral presentation
dc.contributor.imecauthorWang, Wenfei
dc.contributor.imecauthorRuythooren, Wouter
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.conferenceMRS Fall Meeting Symposium E: GaN, AlN, InN, and Their Alloys
dc.source.conferencedate29/11/2004
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec


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