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Achievements and challenges for the electrical performance of MOSFETs with high-k gate dielectrics

dc.contributor.authorGroeseneken, Guido
dc.contributor.authorPantisano, Luigi
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorDegraeve, Robin
dc.contributor.authorHoussa, Michel
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorRoussel, Philippe
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T13:40:06Z
dc.date.available2021-10-15T13:40:06Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8985
dc.sourceIIOimport
dc.titleAchievements and challenges for the electrical performance of MOSFETs with high-k gate dielectrics
dc.typeProceedings paper
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage147
dc.source.endpage155
dc.source.conferenceProceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
dc.source.conferencedate5/07/2004
dc.source.conferencelocationHsinchu Taiwan
imec.availabilityPublished - imec


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