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Radiation source dependence on floating-body effect in thin gate oxide fully-depleted SOI N-MOSFETs

dc.contributor.authorHayama, K.
dc.contributor.authorOhyama, H.
dc.contributor.authorTakakura, K.
dc.contributor.authorKuboyama, S.
dc.contributor.authorJono, T.
dc.contributor.authorOka, K.
dc.contributor.authorMatsuda, S.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T13:43:15Z
dc.date.available2021-10-15T13:43:15Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9001
dc.sourceIIOimport
dc.titleRadiation source dependence on floating-body effect in thin gate oxide fully-depleted SOI N-MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage249
dc.source.endpage252
dc.source.conferenceProceedings International Workshop on Radiation Effects in Semiconductor Devices for Space Applications
dc.source.conferencelocation
imec.availabilityPublished - imec


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