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The role of TXRF in the introduction of high-k materials into IC processing

dc.contributor.authorHellin, David
dc.contributor.authorOnsia, Bart
dc.contributor.authorDelabie, Annelies
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorVinckier, Chris
dc.date.accessioned2021-10-15T13:46:25Z
dc.date.available2021-10-15T13:46:25Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9016
dc.sourceIIOimport
dc.titleThe role of TXRF in the introduction of high-k materials into IC processing
dc.typeProceedings paper
dc.contributor.imecauthorHellin, David
dc.contributor.imecauthorOnsia, Bart
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage199
dc.source.endpage211
dc.source.conferencePhysics and Technology of High-k Gate Dielectrics II
dc.source.conferencedate12/10/2003
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. PV 2003-22


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