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Negative bias temperature instabilities in HfSiON/TaN-based pMOSFETs

dc.contributor.authorHoussa, Michel
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T13:55:55Z
dc.date.available2021-10-15T13:55:55Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9060
dc.sourceIIOimport
dc.titleNegative bias temperature instabilities in HfSiON/TaN-based pMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage121
dc.source.endpage124
dc.source.conferenceTechnical Digest International Electronic Devices Meeting - IEDM
dc.source.conferencedate13/12/2004
dc.source.conferencelocationSan Fransisco, CA USA
imec.availabilityPublished - imec


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