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Simulations of bias temperature instabilities in p-MOSFETs with HfySiOx-based gate dielectrics
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Authors
Houssa, Michel
;
Bizzari, C.
;
Autran, J.L.
Conference
Physics and Technology of High-k Gate Dielectrics II
Title
Simulations of bias temperature instabilities in p-MOSFETs with HfySiOx-based gate dielectrics
Publication type
Proceedings paper
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