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Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

dc.contributor.authorHoussa, Michel
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorDelabie, Annelies
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorAutran, J.L.
dc.contributor.authorStesmans, Andre
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T13:57:00Z
dc.date.available2021-10-15T13:57:00Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9065
dc.sourceIIOimport
dc.titleElectrical characteristics of Ge/GeOx(N)/HfO2 gate stacks
dc.typeOral presentation
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.conference5th Symposium on SiO2, Advanced Dielectrics, and Related Devices
dc.source.conferencedate21/06/2004
dc.source.conferencelocationChamonix France
imec.availabilityPublished - imec


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